MRF8P26080HSR3, MRF8P26080HR3 - RF Power Field Effect Transistors

Freescale Semiconductor

MRF8P26080HSR3 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF8P26080HSR3, MRF8P26080HR3. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	MRF8P26080HSR3, MRF8P26080HR3
Manufacturer	Freescale Semiconductor
File Size	558.08 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF8P26080HR3-FreescaleSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: MRF8P26080HSR3, MRF8P26080HR3. Please refer to the document for exact specifications by model.

MRF8P26080HSR3 Product details

Description

Part Number C1, C2, C3, C4, C5, C6, C7, C8 22 pF Chip Capacitors ATC600F220JT250XT C9, C10 3.3 μF, 50 V Chip Capacitors GRM32DR71H335KA88B C11, C12 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88L C13, C14 4.7 μF, 50 V Chip Capacitors GRM31CR71H475KA12L C15, C16 0.6 pF Chip Capacitors ATC600F0R6BT250XT C17, C18 330 μF, 35 V Electrolytic Capacitors MCGPR35V337M10x16--RH R1 50 Ω, 8 W Chip Resistor 060120A15Z50--2 R2, R3 4.75 Ω, 1/4 W Chip Resistors CRCW12064R75FNEA Z1 2500 M

Features

Production Tested in a Symmetrical Doherty Configuration.
100% PAR Tested for Guaranteed Output Power Capability.
Characterized with Large--Signal Load--Pull Parameters and Common Source S--Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
Designed for Digital Predistortion Error Correction Systems.
RoHS Compliant.

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Published: Jul 21, 2015 |