MRF9060NBR1, MRF9060NR1 RF Power Field Effect Transistors

Freescale Semiconductor

MRF9060NBR1 Description

Freescale Semiconductor Technical Data Document Number: MRF9060N Rev.10, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode L.
95F786 95F787 100B470JP 500X 44F3360 100B110JP 500X 100B100JP 500X 93F2975 100B100JP 500X 100B3R9CP 500X 100B1R7BP 500X 14F185 A04T- 5 3052- 1648- 10.

MRF9060NBR1 Features

* Excellent Thermal Stability
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Integrated ESD Protection
* 200_C Capable Plastic Package
* N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
* TO - 270 - 2 Available

MRF9060NBR1 Applications

* with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment.
* Typical Performance at 945 MHz, 26 Volts Output Power
* 60 Watts PEP Power Gain

📥 Download Datasheet

MRF9060NBR1 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF9060NBR1, MRF9060NR1. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: MRF9060NBR1, MRF9060NR1
Manufacturer: Freescale Semiconductor
File Size: 544.41 KB
Datasheet: MRF9060NR1_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors
Note: This datasheet PDF includes multiple part numbers: MRF9060NBR1, MRF9060NR1.
Please refer to the document for exact specifications by model.

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Power Field Effect Transistors Freescale Semiconductor

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