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HM10DP06D - P-Channel Enhancement Mode Field Effect Transistor

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Datasheet Details

Part number
HM10DP06D
Manufacturer
H&M Semiconductor
File Size
857.79 KB
Datasheet
HM10DP06D-HMSemiconductor.pdf
Description
P-Channel Enhancement Mode Field Effect Transistor

HM10DP06D Product details

Description

Trench Power MV MOSFET technology High density cell design for Low RDS(ON) High Speed switching Applications Battery protection Load switch Power management Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Maximum Unit Drain-source Voltage VDS -60 V Gate-source Voltage VGS Drain Current B TA=25℃ @ Steady State TA=100℃ @ Steady State ID Drain Current B TA=25℃ @ Steady State TA=70℃ @ Steady State ID Pulsed Drain C

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P-Channel Enhancement Mode Field Effect Transistor H&M Semiconductor
H&M Semiconductor HM10DP06D-like datasheet

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