HM2N15PR - N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

HM2N15PR Description

N-Channel Enhancement Mode Power MOSFET .
The HM2N15PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

HM2N15PR Features

* VDS = 150V,ID = 2A RDS(ON) < 300mΩ @ VGS=10V (Typ:260mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current

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HM2N15PR Datasheet Preview — Preview of HM2N15PR PDF

Datasheet Details

Part number: HM2N15PR
Manufacturer: H&M Semiconductor
File Size: 519.21 KB
Datasheet: HM2N15PR-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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