HM2N25MR - 250V N-Channel Enhancement Mode MOSFET
HM2N25MR Features
* VDS = 250V,ID =2A RDS(ON) < 1500mΩ @ VGS=10V (Typ:1300mΩ) High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Excellent package for good heat dissipation Application Power switching application Hard switched and high frequency circuits Uninterruptible power
