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HBC546, HBC546_Hi NPN EPITAXIAL PLANAR TRANSISTOR

HBC546 Description

HI-SINCERITY MICROELECTRONICS CORP.HBC546 NPN EPITAXIAL PLANAR TRANSISTOR Spec.No.: HE6417 Issued Date : 1992.11.25 Revised Date : 2002.02.18 Page.
The HBC546 is primarily intended for use in driver stage of audio amplifiers. High Breakdown Voltage: 65V. High DC Curren.

HBC546 Features

* High Breakdown Voltage: 65V
* High DC Current Gain: 110-800 at IC=2mA, VCE=5V TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (TA=25°

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: HBC546, HBC546_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HBC546, HBC546_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
48.01 KB
Datasheet
HBC546_Hi-SincerityMocroelectronics.pdf
Description
NPN EPITAXIAL PLANAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: HBC546, HBC546_Hi.
Please refer to the document for exact specifications by model.

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NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics HBC546-like datasheet