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HBC556, HBC556_Hi PNP EPITAXIAL PLANAR TRANSISTOR

HBC556 Description

HI-SINCERITY MICROELECTRONICS CORP.HBC556 PNP EPITAXIAL PLANAR TRANSISTOR Spec.No.: HE6422 Issued Date : 1992.11.25 Revised Date : 2005.02.04 Page.
The HBC556 is primarily intended for use in driver stage of audio amplifiers. High Breakdown Voltage: 65V at IC=1mA. High.

HBC556 Features

* High Breakdown Voltage: 65V at IC=1mA
* High AC Current Gain: 75-500 at IC=2mA,VCE=5V,f=1MHz TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Diss

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: HBC556, HBC556_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HBC556, HBC556_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
47.06 KB
Datasheet
HBC556_Hi-SincerityMocroelectronics.pdf
Description
PNP EPITAXIAL PLANAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: HBC556, HBC556_Hi.
Please refer to the document for exact specifications by model.

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PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics HBC556-like datasheet