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HLB123I, HLB123I_Hi NPN Transistor

HLB123I Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HI200202 Issued Date : 2002.06.01 Revised Date : 2006.02.20 Page No.: 1/5 HLB123I NPN EPITAXIAL PLA.
The HLB123I is designed for high voltage. High Speed Switching.

HLB123I Features

* High Speed Switching
* Low Saturation Voltage
* High Reliability TO-251 Absolute Maximum Ratings (TA=25°C)
* Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: HLB123I, HLB123I_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HLB123I, HLB123I_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
52.81 KB
Datasheet
HLB123I_Hi-SincerityMocroelectronics.pdf
Description
NPN Transistor
Note
This datasheet PDF includes multiple part numbers: HLB123I, HLB123I_Hi.
Please refer to the document for exact specifications by model.

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NPN Transistor Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics HLB123I-like datasheet