2SD1609
Hitachi Semiconductor
65.87 KB
Silicon npn transistor.
2SD1609, 2SD1610
www.DataSheet4U.com
Silicon NPN Epitaxial
Application
Low frequency high voltage amplifier complementary pair with 2SB1109 and 2SB1.
📁 Related Datasheet
2SD1600 - NPN Transistor
(INCHANGE)
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1600
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= 4A ·Collector-.
2SD1601 - Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Darlington Power Transistor
2SD1601
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min) ·High DC Current Gain
: h.
2SD1602 - Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Darlington Power Transistor
2SD1602
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·High DC Current Gain
: h.
2SD1603 - Silicon NPN Darlington Power Transistor
(Inchange Semiconductor Company)
isc Silicon NPN Darlington Power Transistor
2SD1603
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min) ·High DC Current Gain
: h.
2SD1603 - NPN Transistor
(Hitachi Semiconductor)
..
..
.
2SD1604 - NPN Transistor
(Hitachi Semiconductor)
..
..
.
2SD1604 - Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Darlington Power Transistor
2SD1604
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·High DC Current Gain
: h.
2SD1605 - Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·High DC Current Gain
: hFE= 1000.
