2SD1609 Datasheet, Transistor, Hitachi Semiconductor

PDF File Details

Part number:

2SD1609

Manufacturer:

Hitachi Semiconductor

File Size:

65.87kb

Download:

📄 Datasheet

Description:

Silicon npn transistor.

Datasheet Preview: 2SD1609 📥 Download PDF (65.87kb)
Page 2 of 2SD1609 Page 3 of 2SD1609

TAGS

2SD1609
Silicon
NPN
Transistor
Hitachi Semiconductor

📁 Related Datasheet

2SD1600 - NPN Transistor (INCHANGE)
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1600 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 4A ·Collector-.

2SD1601 - Power Transistor (Inchange Semiconductor)
isc Silicon NPN Darlington Power Transistor 2SD1601 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : h.

2SD1602 - Power Transistor (Inchange Semiconductor)
isc Silicon NPN Darlington Power Transistor 2SD1602 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High DC Current Gain : h.

2SD1603 - Silicon NPN Darlington Power Transistor (Inchange Semiconductor Company)
isc Silicon NPN Darlington Power Transistor 2SD1603 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : h.

2SD1603 - NPN Transistor (Hitachi Semiconductor)
.. .. .

2SD1604 - NPN Transistor (Hitachi Semiconductor)
.. .. .

2SD1604 - Power Transistor (Inchange Semiconductor)
isc Silicon NPN Darlington Power Transistor 2SD1604 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High DC Current Gain : h.

2SD1605 - Power Transistor (Inchange Semiconductor)
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 1000.

2SD1606 - Silicon NPN Transistor (Hitachi Semiconductor)
2SD1606 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 3. Emitter ID 2.6.

2SD1606 - Silicon NPN Power Transistor (Inchange Semiconductor)
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 1000.

Stock and price

Hitachi Ltd
TRANSISTOR,BJT,NPN,160V V(BR)CEO,100MA I(C),TO-126
Quest Components
2SD1609
461 In Stock
Qty : 129 units
Unit Price : $3.6
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts