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CS1N65A1

Silicon N-Channel Power MOSFET

CS1N65A1 Features

* l Fast Switching l Low ON Resistance(Rdson≤16Ω) l Low Gate Charge (Typical Data:3.6nC) l Low Reverse transfer capacitances(Typical:1pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parame

CS1N65A1 General Description

VDSS 650 V CS1N65 A1, the silicon N-channel Enhanced ID 0.8 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 3 W which reduce the conduction loss, improve switching RDS(ON)Typ 13.8 Ω performance and enhance the avalanche energy. The transistor can be used in vari.

CS1N65A1 Datasheet (539.53 KB)

Preview of CS1N65A1 PDF

Datasheet Details

Part number:

CS1N65A1

Manufacturer:

Huajing Microelectronics

File Size:

539.53 KB

Description:

Silicon n-channel power mosfet.

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CS1N65A1 Silicon N-Channel Power MOSFET Huajing Microelectronics

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