CS1N65B1

Silicon N-Channel Power MOSFET

Huajing Microelectronics

CS1N65B1 Features

* l Fast Switching l Low ON Resistance(Rdson≤9.5Ω) l Low Gate Charge (Typical Data:5.3nC) l Low Reverse transfer capacitances(Typical:2pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Paramet

CS1N65B1 General Description

CS1N65 B1, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and.

CS1N65B1 Datasheet (545.54 KB)

CS1N65B1 Datasheet Preview — Preview of CS1N65B1 PDF

Datasheet Details

Part number:

CS1N65B1

Manufacturer:

Huajing Microelectronics

File Size:

545.54 KB

Description:

Silicon n-channel power mosfet.

📁 Related Datasheet

CS1N65B3 Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS1N65A1 Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS1N65A3 Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS1N60 VDMOS (EDN)

CS1N60A1H Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS1N60A23H Silicon N-Channel Power MOSFET (CR Micro)

CS1N60A3H Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS1N60A4H Silicon N-Channel Power MOSFET (CR Micro)

CS1N60B1R Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS1N60B3R Silicon N-Channel Power MOSFET (Huajing Microelectronics)

TAGS

CS1N65B1 Silicon N-Channel Power MOSFET Huajing Microelectronics

Image Gallery

CS1N65B1 Features

CS1N65B1 General Description

Datasheet Details

File Size:

Description:

CS1N65B1 Distributor