CS1N65B1 Datasheet, Mosfet, Huajing Microelectronics

CS1N65B1 Features

• Mosfet l Fast Switching l Low ON Resistance(Rdson≤9.5Ω) l Low Gate Charge (Typical Data:5.3nC) l Low Reverse transfer capacitances(Typical:2pF) l 100% Single Pulse avalanche energy Test Appli

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CS1N65B1

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Huajing Microelectronics

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📄 Datasheet

Description:

Silicon n-channel power mosfet. CS1N65 B1, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conductio

CS1N65B1 Application

• Applications Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2

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CS1N65B1

Huajing Microelectronics

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