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CS1N65B3

Silicon N-Channel Power MOSFET

CS1N65B3 Features

* l Fast Switching l Low ON Resistance(Rdson≤9.5Ω) l Low Gate Charge (Typical Data:5.3nC) l Low Reverse transfer capacitances(Typical:2pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Paramet

CS1N65B3 General Description

CS1N65 B3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 650 1.5 32 8.5 performance and enhance the avalanche energy. The transistor can be used in various power swit.

CS1N65B3 Datasheet (524.87 KB)

Preview of CS1N65B3 PDF

Datasheet Details

Part number:

CS1N65B3

Manufacturer:

Huajing Microelectronics

File Size:

524.87 KB

Description:

Silicon n-channel power mosfet.

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CS1N65B3 Silicon N-Channel Power MOSFET Huajing Microelectronics

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