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CS1N65A3

Silicon N-Channel Power MOSFET

CS1N65A3 Features

* l Fast Switching l Low ON Resistance(Rdson≤16Ω) l Low Gate Charge (Typical Data:3.6nC) l Low Reverse transfer capacitances(Typical:1pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Paramete

CS1N65A3 General Description

CS1N65 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 650 0.8 20 13.8 performance and enhance the avalanche energy. The transistor can be used in various power swi.

CS1N65A3 Datasheet (532.93 KB)

Preview of CS1N65A3 PDF

Datasheet Details

Part number:

CS1N65A3

Manufacturer:

Huajing Microelectronics

File Size:

532.93 KB

Description:

Silicon n-channel power mosfet.

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CS1N65A3 Silicon N-Channel Power MOSFET Huajing Microelectronics

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