CS3N60A3 Datasheet, Mosfet, Huajing Microelectronics

CS3N60A3 Features

• Mosfet l Fast Switching l Low ON Resistance(Rdson≤3.2Ω) l Low Gate Charge (Typical Data:11nC) l Low Reverse transfer capacitances(Typical:5pF) l 100% Single Pulse avalanche energy Test Applic

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Part number:

CS3N60A3

Manufacturer:

Huajing Microelectronics

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341.65kb

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📄 Datasheet

Description:

Silicon n-channel power mosfet. VDSS 600 V CS3N60 A3 the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=2

CS3N60A3 Application

• Applications Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol VDSS ID IDMa1 VGS EAS a2 EAR a1 IA

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CS3N60A3

Huajing Microelectronics

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