Part number:
CS3N60A3
Manufacturer:
Huajing Microelectronics
File Size:
341.65 KB
Description:
Silicon n-channel power mosfet.
CS3N60A3-HuajingMicroelectronics.pdf
Datasheet Details
VDSS 600 V CS3N60 A3 the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 55 W which reduce the conduction loss, improve switching RDS(ON)Typ 2.7 Ω performance and enhance the avalanche energy.
The transistor can be used in various
CS3N60A3 Features
* l Fast Switching l Low ON Resistance(Rdson≤3.2Ω) l Low Gate Charge (Typical Data:11nC) l Low Reverse transfer capacitances(Typical:5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol VDSS ID
CS3N60A3-HuajingMicroelectronics.pdf
Datasheet Details
CS3N60A3
Huajing Microelectronics
341.65 KB
Silicon n-channel power mosfet.
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