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CS3N60A3

Silicon N-Channel Power MOSFET

CS3N60A3 Features

* l Fast Switching l Low ON Resistance(Rdson≤3.2Ω) l Low Gate Charge (Typical Data:11nC) l Low Reverse transfer capacitances(Typical:5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol VDSS ID

CS3N60A3 General Description

VDSS 600 V CS3N60 A3 the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 55 W which reduce the conduction loss, improve switching RDS(ON)Typ 2.7 Ω performance and enhance the avalanche energy. The transistor can be used in various .

CS3N60A3 Datasheet (341.65 KB)

Preview of CS3N60A3 PDF

Datasheet Details

Part number:

CS3N60A3

Manufacturer:

Huajing Microelectronics

File Size:

341.65 KB

Description:

Silicon n-channel power mosfet.

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CS3N60A3 Silicon N-Channel Power MOSFET Huajing Microelectronics

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