CS3N65A4H-G Datasheet - Huajing Microelectronics

CS3N65A4H-G Silicon N-Channel Power MOSFET

VDSS 650 V CS3N65 A4H-G the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 55 W which reduce the conduction loss, improve switching RDS(ON)Typ 2.9 Ω performance and enhance the avalanche energy. The transistor can be used in vario.

CS3N65A4H-G Features

* l Fast Switching l Low ON Resistance(Rdson≤3.5Ω) l Low Gate Charge (Typical Data:11nC) l Low Reverse transfer capacitances(Typical:5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol VDSS I

CS3N65A4H-G-HuajingMicroelectronics.pdf