CS3N65A4H-G Datasheet, Mosfet, Huajing Microelectronics

CS3N65A4H-G Features

• Mosfet l Fast Switching l Low ON Resistance(Rdson≤3.5Ω) l Low Gate Charge (Typical Data:11nC) l Low Reverse transfer capacitances(Typical:5pF) l 100% Single Pulse avalanche energy Test Appli

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Part number:

CS3N65A4H-G

Manufacturer:

Huajing Microelectronics

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📄 Datasheet

Description:

Silicon n-channel power mosfet. VDSS 650 V CS3N65 A4H-G the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (T

CS3N65A4H-G Application

• Applications Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol VDSS ID IDMa1 VGS EAS a2 EAR a1 IA

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CS3N65A4H-G

Huajing Microelectronics

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