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CS3N70A3H-G Datasheet - Huajing Microelectronics

CS3N70A3H-G - Silicon N-Channel Power MOSFET

VDSS 700 V CS3N70 A3H-G the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 55 W which reduce the conduction loss, improve switching RDS(ON)Typ 3.8 Ω performance and enhance the avalanche energy.

The transistor can be used in vario

CS3N70A3H-G Features

* l Fast Switching l Low ON Resistance(Rdson≤4.2 Ω) l Low Gate Charge (Typical Data:11nC) l Low Reverse transfer capacitances(Typical:5pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(TC= 25℃ unless otherwise specified): Symbol VDSS

CS3N70A3H-G-HuajingMicroelectronics.pdf

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Datasheet Details

Part number:

CS3N70A3H-G

Manufacturer:

Huajing Microelectronics

File Size:

350.47 KB

Description:

Silicon n-channel power mosfet.

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