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CS3N70A3H-G

The CS3N70A3H-G is Silicon N-Channel Power MOSFET designed by Huajing Microelectronics.

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Datasheet Details

Part number CS3N70A3H-G
Manufacturer Huajing Microelectronics
File Size 350.47 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS3N70A3H-G-HuajingMicroelectronics.pdf
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Description

VDSS 700 V CS3N70 A3H-G the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 55 W which reduce the conduction loss, improve switching RDS(ON)Typ 3.8 Ω performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-251, which accords with the RoHS standard..

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