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CS6N60FA9H-G

Silicon N-Channel Power MOSFET

CS6N60FA9H-G Features

* l Fast Switching l Low ON Resistance(Rdson≤1.7Ω) l Low Gate Charge (Typical Data: 19.5nC) l Low Reverse transfer capacitances(Typical: 7.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol P

CS6N60FA9H-G General Description

CS6N60F A9H-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization.

CS6N60FA9H-G Datasheet (301.86 KB)

Preview of CS6N60FA9H-G PDF

Datasheet Details

Part number:

CS6N60FA9H-G

Manufacturer:

Huajing Microelectronics

File Size:

301.86 KB

Description:

Silicon n-channel power mosfet.

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CS6N60FA9H-G Silicon N-Channel Power MOSFET Huajing Microelectronics

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