Datasheet4U Logo Datasheet4U.com

CS6N60FA9H-G Datasheet - Huajing Microelectronics

CS6N60FA9H-G - Silicon N-Channel Power MOSFET

CS6N60F A9H-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization

CS6N60FA9H-G Features

* l Fast Switching l Low ON Resistance(Rdson≤1.7Ω) l Low Gate Charge (Typical Data: 19.5nC) l Low Reverse transfer capacitances(Typical: 7.5pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol P

CS6N60FA9H-G-HuajingDiscreteDevices.pdf

Preview of CS6N60FA9H-G PDF
CS6N60FA9H-G Datasheet Preview Page 2 CS6N60FA9H-G Datasheet Preview Page 3

Datasheet Details

Part number:

CS6N60FA9H-G

Manufacturer:

Huajing Microelectronics

File Size:

301.86 KB

Description:

Silicon n-channel power mosfet.

📁 Related Datasheet

📌 All Tags