CS6N60FA9H-G Datasheet, Mosfet, Huajing Microelectronics

CS6N60FA9H-G Features

• Mosfet l Fast Switching l Low ON Resistance(Rdson≤1.7Ω) l Low Gate Charge (Typical Data: 19.5nC) l Low Reverse transfer capacitances(Typical: 7.5pF) l 100% Single Pulse avalanche energy Test

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CS6N60FA9H-G

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Huajing Microelectronics

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📄 Datasheet

Description:

Silicon n-channel power mosfet. CS6N60F A9H-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the condu

CS6N60FA9H-G Application

• Applications Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a

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CS6N60FA9H-G

Huajing Microelectronics

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