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CS6N90A8H Silicon N-Channel Power MOSFET

CS6N90A8H Description

Silicon N-Channel Power MOSFET CS6N90 A8H ○R General .
CS6N90 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve.

CS6N90A8H Applications

* ATX Power、LED Power. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanc

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Datasheet Details

Part number
CS6N90A8H
Manufacturer
Huajing Microelectronics
File Size
303.42 KB
Datasheet
CS6N90A8H-HuajingMicroelectronics.pdf
Description
Silicon N-Channel Power MOSFET

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Silicon N-Channel Power MOSFET Huajing Microelectronics
Huajing Microelectronics CS6N90A8H-like datasheet