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IXFC52N30P Datasheet - IXYS Corporation

IXFC52N30P PolarHTTM HiPerFET Power MOSFET

www.DataSheet4U.com Advance Technical Information PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFC52N30P VDSS ID25 RDS(on) = 300 V = 32 A = 75 mΩ Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR E AS dv/dt PD TJ TJM Tstg TL VISOL FC Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratin.

IXFC52N30P Features

* z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(

IXFC52N30P_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFC52N30P

Manufacturer:

IXYS Corporation

File Size:

122.14 KB

Description:

Polarhttm hiperfet power mosfet.

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IXFC52N30P IXFC52N30P PolarHTTM HiPerFET Power MOSFET IXYS Corporation

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