www.DataSheet4U.com Advance Technical Information PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFC52N30P VDSS ID25 RDS(on) = 300 V = 32 A = 75 mΩ Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR E AS dv/dt PD TJ TJM Tstg TL VISOL FC Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratin
IXFC52N30P_IXYSCorporation.pdf
Datasheet Details
Part number:
IXFC52N30P
Manufacturer:
IXYS Corporation
File Size:
122.14 KB
Description:
Polarhttm hiperfet power mosfet.