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IXFC60N20 Datasheet - IXYS Corporation

IXFC60N20 HiPerFET MOSFET ISOPLUS220TM

www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFC 60N20 VDSS ID25 RDS(on) trr = 200 = 60 = 33 ≤ 250 V A mΩ ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ .

IXFC60N20 Features

* l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(

IXFC60N20_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFC60N20

Manufacturer:

IXYS Corporation

File Size:

100.10 KB

Description:

Hiperfet mosfet isoplus220tm.

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IXFC60N20 IXFC60N20 HiPerFET MOSFET ISOPLUS220TM IXYS Corporation

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