* l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(
IXFC60N20 Datasheet (100.10 KB)
IXFC60N20
IXYS Corporation
100.10 KB
Hiperfet mosfet isoplus220tm.
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ADVANCE TECHNICAL INFORMATION
HiPerFETTM MOSFET
ISOPLUS220TM
Electrically Isolated Back Surface
N-Channel Enhancement Mode High .
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