IXFC80N08 Datasheet - IXYS Corporation

IXFC80N08 (IXFC80N08 / IXFC80N085) HIPERFET-TM MOSFET ISOPLUS220-TM

www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFC 80N08 IXFC 80N085 80 V 85 V ID25 RDS(on) 80 A 9 mΩ 80 A 9 mΩ Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C Lead current limit TC = 25°C, pulse width limited .

IXFC80N08 Features

* l 1.6 mm (0.062 in.) from case for 10 s Mounting force 50/60 Hz, RMS t = 1 minute leads-to-tab 300 11..65/2.4..11 Nm/lb 2500 2 V~ g Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(

IXFC80N08_IXYSCorporation.pdf