IXFC80N08 (IXFC80N08 / IXFC80N085) HIPERFET-TM MOSFET ISOPLUS220-TM

IXYS Corporation

Description

www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High .

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Datasheet Specifications

Part number: IXFC80N08
Manufacturer: IXYS Corporation
File Size: 98.15 KB
Datasheet: IXFC80N08_IXYSCorporation.pdf
Description: (IXFC80N08 / IXFC80N085) HIPERFET-TM MOSFET ISOPLUS220-TM

Features

* l 1.6 mm (0.062 in. ) from case for 10 s Mounting force 50/60 Hz, RMS t = 1 minute leads-to-tab 300 11..65/2.4..11 Nm/lb 2500 2 V~ g Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(

Applications

* Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 80N08 80N085 2.0 80 85 4.0 ± 100 TJ = 25°C TJ = 125°C V V nA l l l l l VDSS VGS(th) IGSS IDSS RDS(on) V GS = 0 V, ID = 250 µA V DS = VGS, ID = 4 mA V GS = ±20 VDC, VDS = 0 V DS = VDSS VGS = 0 V V GS

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IXFC80N08 IXFC80N08 IXFC80N085 HIPERFET-TM MOSFET ISOPLUS220-TM IXYS Corporation

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