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IXFC80N085, IXFC80N08 Datasheet - IXYS Corporation

IXFC80N085, IXFC80N08, (IXFC80N08 / IXFC80N085) HIPERFET-TM MOSFET ISOPLUS220-TM

www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High .
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IXFC80N08_IXYSCorporation.pdf

This datasheet PDF includes multiple part numbers: IXFC80N085, IXFC80N08. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IXFC80N085, IXFC80N08

Manufacturer:

IXYS Corporation

File Size:

98.15 KB

Description:

(IXFC80N08 / IXFC80N085) HIPERFET-TM MOSFET ISOPLUS220-TM

Note:

This datasheet PDF includes multiple part numbers: IXFC80N085, IXFC80N08.
Please refer to the document for exact specifications by model.

Features

* l 1.6 mm (0.062 in. ) from case for 10 s Mounting force 50/60 Hz, RMS t = 1 minute leads-to-tab 300 11..65/2.4..11 Nm/lb 2500 2 V~ g Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(

Applications

* Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 80N08 80N085 2.0 80 85 4.0 ± 100 TJ = 25°C TJ = 125°C V V nA l l l l l VDSS VGS(th) IGSS IDSS RDS(on) V GS = 0 V, ID = 250 µA V DS = VGS, ID = 4 mA V GS = ±20 VDC, VDS = 0 V DS = VDSS VGS = 0 V V GS

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