* l l l l l 1.6 mm (0.062 in.) from case for 10 s Mounting force 50/60 Hz, RMS, leads-to-tab 300 11..65/2.4..11 Nm/lb 2500 2 V~ g l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(
IXFC80N10 Datasheet (98.68 KB)
IXFC80N10
IXYS Corporation
98.68 KB
Hiperfettm mosfet isoplus220.
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ADVANCE TECHNICAL INFORMATION
HiPerFETTM MOSFET
ISOPLUS220TM
Electrically Isolated Back Surface
N-Channel Enhancement Mode High .
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