IXFC80N10 Datasheet - IXYS Corporation

IXFC80N10, HiPerFETTM MOSFET ISOPLUS220

www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High .

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IXFC80N10_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFC80N10

Manufacturer:

IXYS Corporation

File Size:

98.68 KB

Description:

HiPerFETTM MOSFET ISOPLUS220

Features

* l l l l l 1.6 mm (0.062 in. ) from case for 10 s Mounting force 50/60 Hz, RMS, leads-to-tab 300 11..65/2.4..11 Nm/lb 2500 2 V~ g l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(

Applications

* l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 100 2.0 4.0 ± 100 TJ = 25°C TJ = 125°C V V l l l VDSS VGS(th) IGSS IDSS RDS(on) V GS = 0 V, ID = 250 µA V DS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 V DS = VDSS VGS = 0 V V GS = 10 V, ID = IT

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IXFC80N10 HiPerFETTM MOSFET ISOPLUS220 IXYS Corporation

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