* z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(
IXFC96N15P Datasheet (143.70 KB)
IXFC96N15P
IXYS Corporation
143.70 KB
Polarht hiperfet power mosfet isoplus220.
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PolarHTTM HiPerFET Power MOSFET ISOPLUS220TM
(Electrically Isolated Back Surface)
IXFC 96N15P
VDSS = 150 V ID25 = 42 A RDS(on) .
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