* z z z Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages z z z Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS =
IXFH160N15T Datasheet (149.39 KB)
IXFH160N15T
IXYS Corporation
149.39 KB
Power mosfet.
Preliminary Technical Information Power MOSFET TrenchHVTM HiPerFETTM N-Channel Enhancement Mode Avalanche Rated IXFH160N15T VDSS ID25 RDS(on) = 150.
📁 Related Datasheet
IXFH160N15T N-Channel MOSFET (INCHANGE)
IXFH160N15T2 N-Channel MOSFET (INCHANGE)
IXFH160N15T2 Power MOSFET (IXYS)
IXFH16N120P Power MOSFET (IXYS Corporation)
IXFH16N50P Polar MOSFET (IXYS Corporation)
IXFH16N80P Power MOSFET (IXYS Corporation)
IXFH16N90 HiPerFET Power MOSFETs (IXYS)
IXFH16N90Q Power MOSFET (IXYS)
IXFH100N25P PolarHT HiPerFET Power MOSFET (IXYS)
IXFH100N30X3 N-Channel Power MOSFET (IXYS)
