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IXFH160N15T Datasheet - IXYS Corporation

IXFH160N15T - Power MOSFET

Preliminary Technical Information Power MOSFET TrenchHVTM HiPerFETTM N-Channel Enhancement Mode Avalanche Rated IXFH160N15T VDSS ID25 RDS(on) = 150V = 160A ≤ 9.6mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS dV/dt Pd TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C Maximum 150 150 ± 30 160 75 430 5 1

IXFH160N15T Features

* z z z Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages z z z Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS =

IXFH160N15T_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFH160N15T

Manufacturer:

IXYS Corporation

File Size:

149.39 KB

Description:

Power mosfet.

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