IXFH160N15T Datasheet - IXYS Corporation

IXFH160N15T Power MOSFET

Preliminary Technical Information Power MOSFET TrenchHVTM HiPerFETTM N-Channel Enhancement Mode Avalanche Rated IXFH160N15T VDSS ID25 RDS(on) = 150V = 160A ≤ 9.6mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS dV/dt Pd TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C Maximum 150 150 ± 30 160 75 430 5 1 .

IXFH160N15T Features

* z z z Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages z z z Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS =

IXFH160N15T_IXYSCorporation.pdf