IXFH160N15T Datasheet - IXYS Corporation

IXFH160N15T, Power MOSFET

Preliminary Technical Information Power MOSFET TrenchHVTM HiPerFETTM N-Channel Enhancement Mode Avalanche Rated IXFH160N15T VDSS ID25 RDS(on) = 150.

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IXFH160N15T_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFH160N15T

Manufacturer:

IXYS Corporation

File Size:

149.39 KB

Description:

Power MOSFET

Features

* z z z Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages z z z Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS =

Applications

* z z z ± 200 nA 5 μA 250 μA 8.0 9.6 mΩ z z z z VGS = 10V, ID = 0.5
* ID25, Note 1 DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Uninterruptible power supplies High speed power switching applications www. DataSheet4U. net © 20

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