IXFN38N100P Polar Power MOSFET HiPerFET

IXYS Corporation

Description

PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN38N100P VDSS ID25 RDS(on) trr = = ≤ ≤ 1000V 3.

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Datasheet Specifications

Part number: IXFN38N100P
Manufacturer: IXYS Corporation
File Size: 138.50 KB
Datasheet: IXFN38N100P_IXYSCorporation.pdf
Description: Polar Power MOSFET HiPerFET

Features

* z z Maximum Lead Temperature for Soldering 1.6 mm (0.062 in. ) from Case for 10 50/60Hz IISOL ≤ 1mA www. DataSheet4U. net 300 260 2500 3000 1.5/13 1.3/11.5 30 t = 1min t = 1s z z z Mounting Torque Terminal Connection Torque (M4) International Standard Package Encapsulating Epoxy meets UL 94 V-0,

Applications

* z z z z z 50 μA 4 mA 210 mΩ VGS = 10V, ID = 0.5
* ID25, Note 1 Switched-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls © 2009 IXYS CORPORATION, All Rights Reserved DS99866B(7/09) IXFN38N100P Symbol Test Condition

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IXFN38N100P Polar Power MOSFET HiPerFET IXYS Corporation

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