IXFN38N100P Datasheet - IXYS Corporation

IXFN38N100P Polar Power MOSFET HiPerFET

PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN38N100P VDSS ID25 RDS(on) trr = = ≤ ≤ 1000V 38A 210mΩ 300ns miniBLOC, SOT-227 B E153432 S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 1000 1.

IXFN38N100P Features

* z z Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 50/60Hz IISOL ≤ 1mA www.DataSheet4U.net 300 260 2500 3000 1.5/13 1.3/11.5 30 t = 1min t = 1s z z z Mounting Torque Terminal Connection Torque (M4) International Standard Package Encapsulating Epoxy meets UL 94 V-0,

IXFN38N100P_IXYSCorporation.pdf