Datasheet4U.com

IXFN38N100Q2 - Power MOSFET

Product Overview

IXYS Corporation

📥 Download Datasheet

IXFN38N100Q2 Power MOSFET by IXYS Corporation - Datasheet Preview — Datasheet preview – IXFN38N100Q2

Datasheet Details

Part number	IXFN38N100Q2
Manufacturer	IXYS Corporation
File Size	585.95 KB
Description	Power MOSFET
Datasheet	IXFN38N100Q2 Datasheet
Additional preview pages of the IXFN38N100Q2 datasheet.

Product details

Features

Double metal process for low gate resistance.
miniBLOC, with Aluminium nitride isolation.
Unclamped Inductive Switching (UIS) rated.
Low package inductance G = Gate S = Source S D D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source VISOL 50/60 Hz, RMS, t = 1 minute Mounting torque Terminal connection torque 2500 Md Weight 1.5/13 Nm/lb. in. 1.5/13 Nm/lb. in. 30 g.
Fast intrinsic Rectifier.

📁 Similar Datasheet

IXFN300N20X3 - N-Channel Enhancement Power MOSFET (IXYS)
IXFN320N17T2 - GigaMOS TrenchT2 HiperFET Power MOSFET (IXYS)
IXFN32N60 - HiPerFET Power MOSFET (IXYS)
IXFN36N100 - Power MOSFET (ETC)
IXFN36N60 - HiPerFET Power MOSFET (IXYS)
IXFN100N65X2 - Power MOSFET (IXYS)
IXFN110N85X - Power MOSFET (IXYS)
IXFN120N20 - Power MOSFET (IXYS)

Other Datasheets by IXYS Corporation

IXFN38N100P - Polar Power MOSFET HiPerFET
IXFN38N80Q2 - Power MOSFET
IXFN300N10P - Power MOSFET
IXFN30N110P - Polar Power MOSFET HiPerFET
IXFN30N120P - Polar Power MOSFET HiPerFET
IXFN32N100P - Polar Power MOSFET HiPerFET

Published: May 13, 2011 |