IXFN38N100Q2 Power MOSFET

IXYS Corporation

Description

HiPerFETTM Power MOSFET IXFN38N100Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Preliminary Data Sheet.

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Datasheet Specifications

Part number: IXFN38N100Q2
Manufacturer: IXYS Corporation
File Size: 585.95 KB
Datasheet: IXFN38N100Q2_IXYSCorporation.pdf
Description: Power MOSFET

Features

* Double metal process for low gate resistance
* miniBLOC, with Aluminium nitride isolation
* Unclamped Inductive Switching (UIS) rated
* Low package inductance G = Gate S = Source S D D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source VI

Applications

* DC-DC converters Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 2.5 V 5.0 V ±200 nA TJ = 25°C TJ = 125°C 50 mA 3 mA 0.25 Ω
* Switched-mode power supplies
* DC choppers and resonant-mode VDSS VGS(th) IGSS IDSS R

IXFN38N100Q2 Distributors

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IXFN38N100Q2 Power MOSFET IXYS Corporation

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