IXFN38N100Q2 Datasheet - IXYS Corporation

IXFN38N100Q2 Power MOSFET

HiPerFETTM Power MOSFET IXFN38N100Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Preliminary Data Sheet VDSS = 1000 V ID25 = 38 A RDS(on)= 0.25 Ω trr ≤ 300 ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS .

IXFN38N100Q2 Features

* Double metal process for low gate resistance

* miniBLOC, with Aluminium nitride isolation

* Unclamped Inductive Switching (UIS) rated

* Low package inductance G = Gate S = Source S D D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source VI

IXFN38N100Q2_IXYSCorporation.pdf