IXFR26N50, IXFR24N50 Datasheet - IXYS Corporation

IXFR26N50 HiPerFET Power MOSFETs

Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 26N50 ISOPLUS247TM IXFR 24N50 (Electrically Isolated Back Surface) N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family www.DataSheet4U.com VDSS ID25 RDS(on) 0.20 W 0.23 W 500 V 24 A 500 V 22 A trr £ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, Pulse width limited by TJM .

IXFR26N50 Features

* W °C °C °C °C V~ g

* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation

* Low drain to tab capacitance(

IXFR24N50_IXYSCorporation.pdf

IXFR26N50 Datasheet Preview — This datasheet PDF includes multiple part numbers: IXFR26N50, IXFR24N50. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IXFR26N50, IXFR24N50

Manufacturer:

IXYS Corporation

File Size:

66.84 KB

Description:

Hiperfet power mosfets.

Note:

This datasheet PDF includes multiple part numbers: IXFR26N50, IXFR24N50.
Please refer to the document for exact specifications by model.

IXFR26N50 Distributor

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IXFR26N50 IXFR24N50 HiPerFET Power MOSFETs IXYS Corporation