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IXFR26N50

HiPerFET Power MOSFETs

IXFR26N50 Features

* W °C °C °C °C V~ g

* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation

* Low drain to tab capacitance(

IXFR26N50 Datasheet (66.84 KB)

Preview of IXFR26N50 PDF

Datasheet Details

Part number:

IXFR26N50

Manufacturer:

IXYS Corporation

File Size:

66.84 KB

Description:

Hiperfet power mosfets.
Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 26N50 ISOPLUS247TM IXFR 24N50 (Electrically Isolated Back Surface) N-Channel Enhancement.

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IXFR26N50 HiPerFET Power MOSFETs IXYS Corporation

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