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IXFR26N50, IXFR24N50 Datasheet - IXYS Corporation

IXFR26N50, IXFR24N50, HiPerFET Power MOSFETs

Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 26N50 ISOPLUS247TM IXFR 24N50 (Electrically Isolated Back Surface) N-Channel Enhancement.
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IXFR24N50_IXYSCorporation.pdf

This datasheet PDF includes multiple part numbers: IXFR26N50, IXFR24N50. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IXFR26N50, IXFR24N50

Manufacturer:

IXYS Corporation

File Size:

66.84 KB

Description:

HiPerFET Power MOSFETs

Note:

This datasheet PDF includes multiple part numbers: IXFR26N50, IXFR24N50.
Please refer to the document for exact specifications by model.

Features

* W °C °C °C °C V~ g
* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
* Low drain to tab capacitance(

Applications

* DC-DC converters
* Battery chargers
* Switched-mode and resonant-mode power supplies
* DC choppers
* AC motor control Advantages
* Easy assembly
* Space savings
* High power density 1.6 mm (0.062 in. ) from case for 10 s 50/60 Hz, RMS

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