IXFR26N50Q, IXFR24N50Q Datasheet - IXYS Corporation

IXFR26N50Q HiPerFET Power MOSFETs

HiPerFETTM Power MOSFETs IXFR 26N50Q ISOPLUS247TM IXFR 24N50Q (Electrically Isolated Back Surface) N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family VDSS ID25 RDS(on) 0.20 Ω 0.23 Ω 500 V 24 A 500 V 22 A trr ≤ 250 ns www.DataSheet4U.com Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse width limited by TJM TC = 25°C TC = 25°C TC = .

IXFR26N50Q Features

* l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(

IXFR24N50Q_IXYSCorporation.pdf

IXFR26N50Q Datasheet Preview — This datasheet PDF includes multiple part numbers: IXFR26N50Q, IXFR24N50Q. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IXFR26N50Q, IXFR24N50Q

Manufacturer:

IXYS Corporation

File Size:

111.40 KB

Description:

Hiperfet power mosfets.

Note:

This datasheet PDF includes multiple part numbers: IXFR26N50Q, IXFR24N50Q.
Please refer to the document for exact specifications by model.

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IXFR26N50Q IXFR24N50Q HiPerFET Power MOSFETs IXYS Corporation

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