IXFR26N60Q Datasheet (IXYS Corporation) - HiPerFETTM Power MOSFETs

IXFR26N60Q, HiPerFETTM Power MOSFETs

HiPerFETTM Power MOSFETs IXFR 26N60Q ISOPLUS247TM Q-CLASS (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalance Rated, High dV/dt Low Gate Charge and Capacitances VDSS = 600 V ID25 = 23 A RDS(on) = 250 mW trr £ 250 ns www.DataSheet4U.com Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS £ IDM,

IXFR26N60Q Features

* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation

* IXYS advanced low Qg process

* Low gate charge and capacitances - easier to drive - faster switching

* Low drain to tab capacitance(