IXFR26N60Q HiPerFETTM Power MOSFETs

IXYS Corporation

Description

HiPerFETTM Power MOSFETs IXFR 26N60Q ISOPLUS247TM Q-CLASS (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalance Rated, High dV/dt L.

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Datasheet Specifications

Part number: IXFR26N60Q
Manufacturer: IXYS Corporation
File Size: 67.30 KB
Datasheet: IXFR26N60Q_IXYSCorporation.pdf
Description: HiPerFETTM Power MOSFETs

Features

* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
* IXYS advanced low Qg process
* Low gate charge and capacitances - easier to drive - faster switching
* Low drain to tab capacitance(

Applications

* DC-DC converters
* Battery chargers
* Switched-mode and resonant-mode power supplies
* DC choppers
* AC & DC motor control Advantages
* Easy assembly
* Space savings
* High power density 98727 (06/09/00) Symbol Test Conditions Char

IXFR26N60Q Distributors

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IXFR102N30P IXFR120N25P IXFR140N20P IXFR14N100Q2 IXFR14N80 IXFR150N15

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IXFR26N60Q HiPerFETTM Power MOSFETs IXYS Corporation

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