* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
* IXYS advanced low Qg process
* Low gate charge and capacitances - easier to drive - faster switching
* Low drain to tab capacitance(
IXFR26N60Q Datasheet (67.30 KB)
IXFR26N60Q
IXYS Corporation
67.30 KB
Hiperfettm power mosfets.
HiPerFETTM Power MOSFETs IXFR 26N60Q ISOPLUS247TM Q-CLASS
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode Avalance Rated, High dV/dt L.
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