IXFR27N80Q Datasheet - IXYS Corporation

IXFR27N80Q Power MOSFET

HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die IXFK 27N80Q IXFR 27N80Q IXFX 27N80Q VDSS ID25 RDS(on) = 800 V = 27 A = 300 mW trr £ 250 ns PLUS 247TM (IXFX) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr G (TAB) D Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS .

IXFR27N80Q Features

* IXYS advanced low Qg process

* Low gate charge and capacitances - easier to drive - faster switching

* International standard packages

* Low RDS (on)

* Rated for unclamped Inductive load switching (UIS) rated

* Molding epoxies meet UL 94 V-0 flammabi

IXFR27N80Q Datasheet (55.89 KB)

IXFR27N80Q Datasheet Preview — Preview of IXFR27N80Q PDF

Datasheet Details

Part number:

IXFR27N80Q

Manufacturer:

IXYS Corporation

File Size:

55.89 KB

Description:

Power mosfet.

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IXFR27N80Q Power MOSFET IXYS Corporation

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