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IXFR40N50Q2 Datasheet - IXYS Corporation

IXFR40N50Q2 - HiPerFET Power MOSFETs

www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC Weight 1.6 mm (0.063 in) from case for 10 s Mounting force Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG

IXFR40N50Q2 Features

* z z z z z z Double metal process for low gate resistance International standard packages Epoxy meet UL 94 V-0, flammability classification Low RDS (on), low Qg Avalanche energy and current rated Fast intrinsic rectifier Applications z z z z Symbol Test Conditions Characteristic Values (TJ =

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Datasheet Details

Part number:

IXFR40N50Q2

Manufacturer:

IXYS Corporation

File Size:

584.78 KB

Description:

Hiperfet power mosfets.

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IXFR40N50Q2 HiPerFET Power MOSFETs IXYS Corporation