l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(
✔ IXFR48N50Q Application
l DC-DC converters
l l l l
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise spec
IXFR44N60, IXYS Corporation
HiPerFETTM Power MOSFETs ISOPLUS247TM
(Electrically Isolated Back Surface) Single MOSFET Die
IXFR 44N60
VDSS = 600 V ID25 = 38 A RDS(on) = 130 mW tr.
