IXFR44N60 Power MOSFET

IXYS Corporation

Description

HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Back Surface) Single MOSFET Die IXFR 44N60 VDSS = 600 V ID25 = 38 A RDS(on) = 130 mW tr.

📥 Download Datasheet

IXFR44N60 Datasheet Preview — Preview of IXFR44N60 PDF

Datasheet Specifications

Part number: IXFR44N60
Manufacturer: IXYS Corporation
File Size: 34.55 KB
Datasheet: IXFR44N60_IXYSCorporation.pdf
Description: Power MOSFET

Features

* W °C °C °C °C V~ g
* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
* Low drain to tab capacitance(

Applications

* 1.6 mm (0.063 in. ) from case for 10 s 50/60 Hz, RMS t = 1 min 300 2500 5 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 V 4.5 V ±100 nA TJ = 25°C TJ = 125°C 100 mA 2 mA 130 mW VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V. ID = 250mA VDS

IXFR44N60 Distributors

📁 Related Datasheet

IXFR48N60P IXFR102N30P IXFR120N25P IXFR140N20P IXFR14N100Q2 IXFR14N80

📌 All Tags

IXFR44N60 Power MOSFET IXYS Corporation

IXYS Corporation IXFR44N60-like datasheet