IXFR44N60 Datasheet - IXYS Corporation

IXFR44N60 Power MOSFET

HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Back Surface) Single MOSFET Die IXFR 44N60 VDSS = 600 V ID25 = 38 A RDS(on) = 130 mW trr £ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS T J £ 150°C, RG = 2 W TC = 25°C Maximum Ratings 600 600 ±20 ±30 38.

IXFR44N60 Features

* W °C °C °C °C V~ g

* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation

* Low drain to tab capacitance(

IXFR44N60_IXYSCorporation.pdf

IXFR44N60 Datasheet Preview — Preview of IXFR44N60 PDF

Datasheet Details

Part number:

IXFR44N60

Manufacturer:

IXYS Corporation

File Size:

34.55 KB

Description:

Power mosfet.

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IXFR44N60 IXFR44N60 Power MOSFET IXYS Corporation

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