IXFR44N80P Power MOSFET

IXYS Corporation

Description

www.DataSheet4U.com PolarHV HiPerFET Power MOSFET Electrically Isolated Tab N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TM IXFR.

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Datasheet Specifications

Part number: IXFR44N80P
Manufacturer: IXYS Corporation
File Size: 121.04 KB
Datasheet: IXFR44N80P_IXYSCorporation.pdf
Description: Power MOSFET

Features

* z z z 1.6 mm (0.062 in. ) from case for 10 s Plastic body for 10 seconds 50/60 Hz, RMS, 1 minute Mounting force 300 260 2500 20..120 /4.5..25 5 z z z N/lb g Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain

Applications

* z z Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 800 μA VDS = VGS, ID = 8 mA VGS = ± 30 V, VDS = 0 V VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 800 3.0 5.0 ± 200 50 1.5 200 V V z

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IXFR44N80P Power MOSFET IXYS Corporation

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