IXFR44N50P Datasheet - IXYS Corporation

IXFR44N50P Power MOSFET

www.DataSheet4U.com PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM N-Channel Enhancement Avalanche Rated Fast Intrinsic Diode IXFR 44N50P VDSS ID25 trr RDS(on) (Electrically Isolated Back Surface) = = ≤ ≤ 500 V 24 A 150 m Ω 200 ns Symbol VDSS VDGR VGSM VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient Continuous TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C .

IXFR44N50P Features

* l l International standard isolated package UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intr

IXFR44N50P_IXYSCorporation.pdf