www.DataSheet4U.com PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM N-Channel Enhancement Avalanche Rated Fast Intrinsic Diode IXFR 44N50P VDSS ID25 trr RDS(on) (Electrically Isolated Back Surface) = = ≤ ≤ 500 V 24 A 150 m Ω 200 ns Symbol VDSS VDGR VGSM VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient Continuous TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C
IXFR44N50P_IXYSCorporation.pdf
Datasheet Details
Part number:
IXFR44N50P
Manufacturer:
IXYS Corporation
File Size:
173.70 KB
Description:
Power mosfet.