* l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(
IXFR48N50Q Datasheet (79.68 KB)
IXFR48N50Q
IXYS Corporation
79.68 KB
Power mosfet.
www.DataSheet4U.com HiPerFETTM Power MOSFETs ISOPLUS247TM, Q-Class (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Q.
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