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IXFR48N50Q Datasheet - IXYS Corporation

IXFR48N50Q Power MOSFET

www.DataSheet4U.com HiPerFETTM Power MOSFETs ISOPLUS247TM, Q-Class (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt VDSS IXFR 44N50Q IXFR 48N50Q ID25 RDS(on) 500 V 34 A 120 mΩ 500 V 40 A 110 mΩ trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, .

IXFR48N50Q Features

* l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(

IXFR48N50Q_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFR48N50Q

Manufacturer:

IXYS Corporation

File Size:

79.68 KB

Description:

Power mosfet.

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