* z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(
IXFR4N100Q Datasheet (107.29 KB)
IXFR4N100Q
IXYS Corporation
107.29 KB
Hiperfet power mosfets.
www.DataSheet4U.com HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High d.
📁 Related Datasheet
IXFR40N50Q2 HiPerFET Power MOSFETs (IXYS Corporation)
IXFR40N90P Power MOSFET (IXYS Corporation)
IXFR44N50P Power MOSFET (IXYS Corporation)
IXFR44N50Q Power MOSFET (IXYS Corporation)
IXFR44N50Q Power MOSFET (IXYS Corporation)
IXFR44N60 Power MOSFET (IXYS Corporation)
IXFR44N80P Power MOSFET (IXYS Corporation)
IXFR48N50Q Power MOSFET (IXYS Corporation)
IXFR48N50Q Power MOSFET (IXYS Corporation)
IXFR48N60P Power MOSFET (IXYS)
