Datasheet Details
Part number:
IXFR4N100Q
Manufacturer:
IXYS Corporation
File Size:
107.29 KB
Description:
Hiperfet power mosfets.
IXFR4N100Q_IXYSCorporation.pdf
Datasheet Details
Part number:
IXFR4N100Q
Manufacturer:
IXYS Corporation
File Size:
107.29 KB
Description:
Hiperfet power mosfets.
IXFR4N100Q, HiPerFET Power MOSFETs
www.DataSheet4U.com HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDS
IXFR4N100Q Features
* z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(
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