Datasheet Specifications
- Part number
- IXFR4N100Q
- Manufacturer
- IXYS Corporation
- File Size
- 107.29 KB
- Datasheet
- IXFR4N100Q_IXYSCorporation.pdf
- Description
- HiPerFET Power MOSFETs
Description
www.DataSheet4U.com HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High d.
Features
* z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(Applications
* z DC-DC converters z z z z Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1mA VDS = VGS, ID = 1.5 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT Notes 2, 3 Advantages z Easy assemblyIXFR4N100Q Distributors
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