IXFR4N100Q Datasheet - IXYS Corporation

IXFR4N100Q HiPerFET Power MOSFETs

www.DataSheet4U.com HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDS.

IXFR4N100Q Features

* z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(

IXFR4N100Q Datasheet (107.29 KB)