IXGT39N60BD1 Datasheet - IXYS Corporation

IXGT39N60BD1 HiPerFAST IGBT

HiPerFASTTM IGBT IXGH39N60B IXGH39N60BD1 IXGT39N60B IXGT39N60BD1 VCES IC25 VCE(sat) tfi = = = = 600 V 76 A 1.7 V 200 ns Preliminary data (D1) www.DataSheet4U.com Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load TC = 25°C Maximum Ratings 600 600 ± 20 ± 30 76 39 152 ICM = 76 @ 0.8 VCES 200 -55 +150 150 -55 +150 300 V V V V A A A A W °C °C °C °C TO-268.

IXGT39N60BD1 Features

* z Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (M3) TO-247 z 1.13/10Nm/lb.in. TO-247 AD TO-268 6 4 g g z z International standard packages JEDEC TO-247 AD & TO-268 High current handling capability Newest generation HDMOSTM process MOS Ga

IXGT39N60BD1 Datasheet (187.65 KB)