IXTH1N100 Datasheet - IXYS Corporation

IXTH1N100 High-Voltage MOSFET

Advance Technical Information High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTH 1N100 IXTT 1N100 V DSS ID25 RDS(on) = 1000 V = 1.5 A = 11 Ω Symbol Test Conditions V DSS VDGR VGS VGSM ID25 I DM T J = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C T C = 25°C, pulse width limited by T JM IAR EAR EAS dv/dt PD T J TJM T stg Md Weight TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 18 Ω TC = 25°C .

IXTH1N100 Features

* International standard packages High voltage, Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Fast switching times Applications Switch-mode and resonant-mode power supplies Flyback inverters DC choppers High frequency matching Advantages Space savings High pow

IXTH1N100_IXYSCorporation.pdf