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IXTT96N20P, IXTQ96N20P N-Channel MOSFET

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Description

PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH 96N20P IXTQ 96N20P IXTT 96N20P V DSS ID25 RDS(on) = 200 V = 96 A ≤ 24 mΩ TO.

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This datasheet PDF includes multiple part numbers: IXTT96N20P, IXTQ96N20P. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
IXTT96N20P, IXTQ96N20P
Manufacturer
IXYS Corporation
File Size
239.95 KB
Datasheet
IXTQ96N20P_IXYSCorporation.pdf
Description
N-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: IXTT96N20P, IXTQ96N20P.
Please refer to the document for exact specifications by model.

Features

* l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA Characteristic Values Min. Typ. Max. 200 V VGS(th) VDS = VGS,

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