IXTQ96N20P_IXYSCorporation.pdf
Datasheet Details
Part number:
IXTT96N20P, IXTQ96N20P
Manufacturer:
IXYS Corporation
File Size:
239.95 KB
Description:
N-channel mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXTT96N20P, IXTQ96N20P.
Please refer to the document for exact specifications by model.
IXTT96N20P, IXTQ96N20P, N-Channel MOSFET
PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH 96N20P IXTQ 96N20P IXTT 96N20P V DSS ID25 RDS(on) = 200 V = 96 A ≤ 24 mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSS V GSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD T J TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continous Transient TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS,
IXTT96N20P Features
* l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA Characteristic Values Min. Typ. Max. 200 V VGS(th) VDS = VGS,
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