IXBX25N250 Datasheet - IXYS

IXBX25N250 Bipolar MOS Transistor

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBX25N250 VCES = IC90 = VCE(sat) ≤ 2500V 25A 3.3V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 4.7Ω Clamped Inductive Load TC = 25°C 1.6mm (0.062 in.) From Case for 10s Plastic Body for 10 seconds Mounting Force Maximum Ratings 25.

IXBX25N250 Features

* z High Blocking Voltage z International Standard Package z Low Conduction Losses Advantages z Low Gate Drive Requirement z High Power Density Applications z Switch-Mode and Resonant-Mode Power Supplies z Uninterruptible Power Supplies (UPS) z Laser Generator z Capacitor Discharge Circuit z AC Switch

IXBX25N250 Datasheet (172.75 KB)