Datasheet Specifications
- Part number
- IXBX25N250
- Manufacturer
- IXYS
- File Size
- 172.75 KB
- Datasheet
- IXBX25N250-IXYS.pdf
- Description
- Bipolar MOS Transistor
Description
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBX25N250 VCES = IC90 = VCE(sat) ≤ 2500V 25A 3.3V Symbol VCES VCGR VGES VGEM.
Applications
* z Switch-Mode and Resonant-Mode Power Supplies z Uninterruptible Power Supplies (UPS) z Laser Generator z Capacitor Discharge Circuit z AC Switches © 2010 IXYS CORPORATION, All Rights Reserved DS100044A(10/10) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values MiIXBX25N250 Distributors
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