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IXBX25N250

Bipolar MOS Transistor

IXBX25N250 Features

* z High Blocking Voltage z International Standard Package z Low Conduction Losses Advantages z Low Gate Drive Requirement z High Power Density Applications z Switch-Mode and Resonant-Mode Power Supplies z Uninterruptible Power Supplies (UPS) z Laser Generator z Capacitor Discharge Circuit z AC Switch

IXBX25N250 Datasheet (172.75 KB)

Preview of IXBX25N250 PDF

Datasheet Details

Part number:

IXBX25N250

Manufacturer:

IXYS

File Size:

172.75 KB

Description:

Bipolar mos transistor.
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBX25N250 VCES = IC90 = VCE(sat) ≤ 2500V 25A 3.3V Symbol VCES VCGR VGES VGEM.

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TAGS

IXBX25N250 Bipolar MOS Transistor IXYS

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