IXBX64N250 Datasheet - IXYS

IXBX64N250 Monolithic Bipolar MOS Transistor

High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK64N250 IXBX64N250 VCES = I = C110  VCE(sat) 2500V 64A 3.0V TO-264 (IXBK) Symbol VCES VCGR VGES V GEM I C25 I LRMS IC100 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM Tstg T L Md F C Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 2500 V 2500 V ±25 V ±35 V T C = 25C (Chip Capability) Lead Current Limit, RMS 156 A 120 A TC = 110°C TC = 25°C, 1.

IXBX64N250 Features

* High Blocking Voltage

* Low Switching Losses

* High Current Handling Capability

* Anti-Parallel Diode Advantages

* High Power Density

* Low Gate Drive Requirement Applications

* Switch-Mode and Resonant-Mode Power Supplies

* Uninterrupted Power Supplies (UPS)

IXBX64N250 Datasheet (2.07 MB)

IXBX64N250 Datasheet Preview — Preview of IXBX64N250 PDF

Datasheet Details

Part number:

IXBX64N250

Manufacturer:

IXYS

File Size:

2.07 MB

Description:

Monolithic bipolar mos transistor.

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IXBX64N250 Monolithic Bipolar MOS Transistor IXYS

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