* International Standard Packages
* High Blocking Voltage
* Fast Switching
* High Current Handling Capability
* Anti-Parallel Diode Advantages
* High Power Density
* Low Gate Drive Requirement
* Intergrated Diode Can Be Used for Protection Applications
* Switch-Mo
IXBX75N170A Datasheet (197.15 KB)
IXBX75N170A
IXYS
197.15 KB
Bipolar mos transistor.
BiMOSFETTM Monolithic IXBK75N170A Bipolar MOS Transistor IXBX75N170A
VCES =
I
=
C90
VCE(sat)
t = fi(typ)
1700V 65A 6.00V 60ns
Symbol
VCES VC.
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