IXBX75N170A Datasheet - IXYS

IXBX75N170A Bipolar MOS Transistor

BiMOSFETTM Monolithic IXBK75N170A Bipolar MOS Transistor IXBX75N170A VCES = I = C90  VCE(sat) t = fi(typ) 1700V 65A 6.00V 60ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 1700 V 1700 V ±20 V ±30 V TC = 25°C TC = 90°C TC = 25°C, 1ms 110 A 65 A 300 A VGE= 15V, TVJ = 125°C, RG = 1 ICM = 100 A Clamped Inductive Load VCE .

IXBX75N170A Features

* International Standard Packages

* High Blocking Voltage

* Fast Switching

* High Current Handling Capability

* Anti-Parallel Diode Advantages

* High Power Density

* Low Gate Drive Requirement

* Intergrated Diode Can Be Used for Protection Applications

* Switch-Mo

IXBX75N170A Datasheet (197.15 KB)

IXBX75N170A Datasheet Preview — Preview of IXBX75N170A PDF

Datasheet Details

Part number:

IXBX75N170A

Manufacturer:

IXYS

File Size:

197.15 KB

Description:

Bipolar mos transistor.

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IXBX75N170A Bipolar MOS Transistor IXYS

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