IXBX55N300, IXBK55N300 Datasheet - IXYS

IXBX55N300 - Monolithic Bipolar MOS Transistor

High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK55N300 IXBX55N300 Symbol VCES VCGR VGES V GEM IC25 I C110 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM T stg TL Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 3000 V 3000 V ±25 V ±35 V TC = 25°C (Chip Capability) T = 110°C C TC = 25°C, 1ms VGE= 15V, TVJ = 125°C, RG = 2 Clamped Inductive Load 130 A 55 A 600 A ICM = 110 A 1500 V VGE = 15V,

IXBX55N300 Features

* High Blocking Voltage

* International Standard Packages

* Low Conduction Losses

* High Current Handling Capability

* MOS Gate Turn-On - Drive Simplicity Advantages

* Easy to Mount

* Space Savings

* High Power Density Applications

* Uninterruptible Power Supplies

IXBK55N300-IXYS.pdf