* High Blocking Voltage
* International Standard Packages
* Low Conduction Losses
* High Current Handling Capability
* MOS Gate Turn-On - Drive Simplicity Advantages
* Easy to Mount
* Space Savings
* High Power Density Applications
* Uninterruptible Power Supplies
IXBX55N300 Datasheet (1.81 MB)
IXBX55N300
IXYS
1.81 MB
Monolithic bipolar mos transistor.
High Voltage, High Gain BiMOSFETTM
Monolithic Bipolar MOS Transistor
IXBK55N300 IXBX55N300
Symbol
VCES VCGR VGES V
GEM
IC25 I
C110
ICM SSOA (RBSOA)
.
📁 Related Datasheet
IXBX25N250 Bipolar MOS Transistor (IXYS)
IXBX64N250 Monolithic Bipolar MOS Transistor (IXYS)
IXBX75N170 Bipolar MOS Transistor (IXYS)
IXBX75N170A Bipolar MOS Transistor (IXYS)
IXBA12N300HV Bipolar MOS Transistor (IXYS)
IXBA14N300HV Bipolar MOS Transistor (IXYS)
IXBA16N170AHV Bipolar MOS Transistor (IXYS)
IXBD4410 Half Bridge Driver Chipset (IXYS Corporation)
IXBD4411 Half Bridge Driver Chipset (IXYS Corporation)
IXBF12N300 Monolithic Bipolar MOS Transistor (IXYS)
