High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK55N300 IXBX55N300 Symbol VCES VCGR VGES V GEM IC25 I C110 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM T stg TL Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 3000 V 3000 V ±25 V ±35 V TC = 25°C (Chip Capability) T = 110°C C TC = 25°C, 1ms VGE= 15V, TVJ = 125°C, RG = 2 Clamped Inductive Load 130 A 55 A 600 A ICM = 110 A 1500 V VGE = 15V,
Datasheet Details
Part number:
IXBX55N300, IXBK55N300
Manufacturer:
IXYS
File Size:
1.81 MB
Description:
Monolithic bipolar mos transistor.
Note:
This datasheet PDF includes multiple part numbers: IXBX55N300, IXBK55N300.
Please refer to the document for exact specifications by model.