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IXFH150N20T Datasheet - IXYS

IXFH150N20T Power MOSFET

Advance Technical Information TrenchTM HiperFETTM Power MOSFETs IXFT150N20T IXFH150N20T VDSS = 200V ID25 = 150A ≤ RDS(on) 15mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 1.6mm (0.063in) fro.

IXFH150N20T Features

* z International Standard Packages z Avalanche Rated z High Current Handling Capability z Fast Intrinsic Rectifier z Low RDS(on) Advantages z Easy to Mount z Space Savings z High Power Density Applications z DC-DC Converters z Battery Chargers z Switch-Mode and Resonant-Mode Power Supplies z DC Chopp

IXFH150N20T Datasheet (182.90 KB)