* q International standard package JEDEC TO-247 q High frequency IGBT with guaranteed Short Circuit SOA capability q Fast Fall Time for switching speeds up to 20 kHz q 2nd generation HDMOSTM process q Low V CE(sat) - for minimum on-state conduction losses q MOS Gate turn-on - drive simplicity Applicat
IXSH45N120 Datasheet (87.51 KB)
IXSH45N120
IXYS
87.51 KB
High voltage igbt.
High Voltage, Low VCE(sat) IGBT
Short Circuit SOA Capability
IXSH 45N120
VCES
IC25 VCE(sat)
= 1200 V = 75 A = 3V
Symbol
Test Conditions
V CES
VC.
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