IXSH45N120 Datasheet - IXYS

IXSH45N120 High Voltage IGBT

High Voltage, Low VCE(sat) IGBT Short Circuit SOA Capability IXSH 45N120 VCES IC25 VCE(sat) = 1200 V = 75 A = 3V Symbol Test Conditions V CES VCGR VGES VGEM IC25 I C90 ICM SSOA (RBSOA) T J = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C, limited by leads T C = 90°C TC = 25°C, 1 ms VGE= 15 V, TJ = 125°C, RG = 2.7 W Clamped inductive load, L = 30 mH tSC (SCSOA) PC TJ TJM Tstg M d Weight VGE= 15 V, VCE = 0.6 VCES, TJ = 125°C RG = 22 W, non r.

IXSH45N120 Features

* q International standard package JEDEC TO-247 q High frequency IGBT with guaranteed Short Circuit SOA capability q Fast Fall Time for switching speeds up to 20 kHz q 2nd generation HDMOSTM process q Low V CE(sat) - for minimum on-state conduction losses q MOS Gate turn-on - drive simplicity Applicat

IXSH45N120 Datasheet (87.51 KB)