* z International standard package JEDEC TO-247 AD z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z High commutating dv/dt rating z Fast switching times Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS(th) IGSS IDS
IXTH60N15 Datasheet (95.35 KB)
IXTH60N15
IXYS
95.35 KB
Power mosfet.
Advance Technical Information Standard Power MOSFET N-Channel Enhancement Mode IXTH 60N15 VDSS = 150 V ID (cont) = 60 A RDS(on) = 33 mΩ Symbol Tes.
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