IXTH60N15 Power MOSFET

IXYS

Description

Advance Technical Information Standard Power MOSFET N-Channel Enhancement Mode IXTH 60N15 VDSS = 150 V ID (cont) = 60 A RDS(on) = 33 mΩ Symbol Tes.

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Datasheet Specifications

Part number: IXTH60N15
Manufacturer: IXYS
File Size: 95.35 KB
Datasheet: IXTH60N15-IXYS.pdf
Description: Power MOSFET

Features

* z International standard package JEDEC TO-247 AD z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z High commutating dv/dt rating z Fast switching times Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS(th) IGSS IDS

Applications

* z Switch-mode and resonant-mode power supplies z Motor controls z Uninterruptible Power Supplies (UPS) z DC choppers Advantages z Easy to mount with 1 screw (isolated mounting screw hole) z Space savings z High power density © 2003 IXYS All rights reserved DS99035(04/03) IXTH 60N15 Symbol gfs Ci

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IXTH60N15 Power MOSFET IXYS

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