IXTT75N10L2, IXTH75N10L2 Datasheet - IXYS

IXTT75N10L2 Power MOSFET

Advance Technical Information LinearL2TM Power MOSFET w/extended FBSOA N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated IXTH75N10L2 IXTT75N10L2 D O DD RGi G O ww O S VDSS = 100V ID25 = 75A ≤ RDS(on) 21mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C 1.6mm (0.063in) from Case for 10s P.

IXTT75N10L2 Features

* z Designed for Linear Operation z International Standard Packages z Avalanche Rated z Integrated Gate Resistor for Easy Paralleling z Guaranteed FBSOA at 75°C Advantages z Easy to Mount z Space Savings z High Power Density Applications z Solid State Circuit Breakers z Soft Start Controls z Linear Am

IXTH75N10L2-IXYS.pdf