* z International standard packages z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS = 0 V, ID = 250 µ
IXTT75N15 Datasheet (579.71 KB)
IXTT75N15
IXYS
579.71 KB
High current power mosfet.
High Current Power MOSFET
N-Channel Enhancement Mode
IXTH 75N15 IXTT 75N15
VDSS ID25
RDS(on)
= 150 V = 75 A = 23 mΩ
Symbol
VDSS VDGR VGS VGSM ID25.
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